Mr. Muhammad Imran Nawaz | Engineering | Best Researcher Award
Mr. Muhammad ImranNawaz, Bilkent University, Turkey
Muhammad Imran Nawaz is a seasoned RF and Microwave Design Engineer with a robust background in GaN-HEMT-based Monolithic Microwave Integrated Circuits. Holding an MS from Northwestern Polytechnical University, China, his research focuses on high-frequency circuit design, including LNAs, power amplifiers, and switches. Currently pursuing a PhD at Bilkent University, Turkey, Imran specializes in on-wafer measurements, MMICs, and robustness investigations. With over 14 years of professional experience at CESAT, Pakistan, he excelled in designing solid-state power amplifiers, RF transmit chains, antennas, and more. Imran’s expertise spans a wide range of applications, from communication links to radar systems. ππ§π
Publication Profile:
Education:
Muhammad Imran Nawaz, an accomplished RF and Microwave Design Engineer, boasts a stellar academic journey. He earned an MS in EM Field and Microwave Technology in 2014 from Northwestern Polytechnical University (NPU) in Xi’an, China, graduating with an outstanding 94.55%. His master’s dissertation delved into the intricate realm of “Investigation of Image Reject Filter Based on Substrate Integrated Waveguide (SIW) Technology.” Imran’s educational prowess began with a B.E. in Electrical Engineering from the National University of Science and Technology (NUST), Rawalpindi, Pakistan, in 2005, where he secured a commendable CGPA of 3.61. His final year project showcased his ingenuity through the “Design and Implementation of Microwave Power Amplifier.” πππ‘
Professional Experience:
Muhammad Imran Nawaz, a dedicated RF and Microwave Design Engineer, is currently pursuing his Ph.D. at Bilkent University in Ankara, Turkey, since January 2021. In his doctoral journey, Imran has been actively involved in diverse research areas, conducting on-wafer DC, small-signal, noise, and load pull measurements. His focus includes the design of multi-stage MMIC LNAs for X-band T/R modules, investigations into the robustness and reverse recovery time of LNAs, and the development of S and X band MMIC Power Amplifiers. Imran’s expertise also extends to designing different peripheries of HEMTs and conducting reliability and RF HTOL measurements.Previously, from March 2006 to December 2020, Imran held the position of RF and Microwave Design Engineer at CESAT in Islamabad, Pakistan. During this tenure, he showcased his versatile skills in designing and developing a wide array of components, including solid-state CW Power Amplifiers across various frequency bands, high-power pulsed amplifiers, RF transmit chains, microstrip patch, and log-periodic antennas for cell phone jammers. His contributions spanned the design of microwave passives, phase lock loops (PLL), planar microstrip-to-waveguide transitions, low-noise amplifiers, integrated front-ends, up and down converter modules, bi-directional amplifiers, and T/R modules for phased array radars.Imran’s proficiency extends to the intricate details of RF hardware for FMCW and pulsed synthetic aperture radars, as well as the design of high-power switch mode power supplies for power amplifier applications. Throughout his career, he has excelled in the characterization of RF/Microwave devices, encompassing parameters such as S-parameters, noise figure, power output, P1dB, and two-tone measurements. Imran Nawaz’s journey is marked by a rich tapestry of experiences, contributing significantly to the field of RF and Microwave technology. ππ¬π‘
Research Focus:
Muhammad Imran Nawaz’s research focus lies in the innovative realm of Microwave and RF Engineering. With a wealth of publications spanning transitions from Substrate Integrated Waveguide (SIW) to microstrip at X-Band to the design of wideband microstrip patch antennas, he has significantly contributed to radar applications. Imran’s expertise extends to MMIC/MIC-compatible planar transitions at Ku-Band, novel waveguide-to-microstrip transitions, and the development of frequency synthesizers. His recent work delves into the design and robustness improvement of high-performance LNAs using advanced GaN technology. Imran’s commitment to advancing communication systems is evident in his exploration of lunar communication and WLAN amplifier design. π‘ππ
Publication Top Notes:
- Substrate integrated waveguide (SIW) to microstrip transition at X-Band
- π Cited by: 62
- π Year: 2014
- A review on wideband microstrip patch antenna design techniques
- π Cited by: 48
- π Year: 2013
- MMIC/MIC COMPATIBLE PLANAR MICROSTRIP TO WAVEGUIDE TRANSITION AT Ku-BAND FOR RADAR APPLICATIONS
- π Cited by: 5
- π Year: 2010
- Narrow band ridge waveguide-to-microstrip transition for low noise amplifier at Ku-band
- π Cited by: 5
- π Year: 2009
- K-band PLL based frequency synthesizer
- π Cited by: 5
- π Year: 2009
- Design and robustness improvement of highβperformance LNA using 0.15 ΞΌm GaN technology forΒ Xβband applications
- π Cited by: 4
- π Year: 2022
- S-band MESFET linear high power amplifier for OFDM applications
- π Cited by: 3
- π Year: 2007
- A frequency agile fast switching hybrid synthesizer for radar applications
- π Cited by: 1
- π Year: 2009
- Design of GaNβbased Xβband LNAs to achieve subβ1.2 dB noise figure
- π Year: 2022
- X-band Cascode LNA with Bias-invariant Noise Figure using 0.15 Β΅m GaN-on-SiC Technology
- π Year: 2022
- Compact wideband microstrip bandpass filter for IF stage of millimeterwave systems
- π Year: 2013
- Design of Lunar Communication System for C3SAT Constellation
- π Year: 2013
- Design and Development of Bi-directional Amplifier for WLAN
- π Year: 2010
- DESIGN OF LOW NOISE, HIGH GAIN AND MEDIUM POWER AMPLIFIER
- π Year: 2010
- A novel phase-balance technique for corpaorate structure power combining of high power amplifiers
- π Year: 2009