Prof. Kwang-Ho Kwon | Plasma Etching | Best Researcher Award
Prof. Kwang-Ho Kwon, Korea University‐Sejong Campus, South Korea
Prof. Kwang-Ho Kwon is a distinguished researcher specializing in control and instrumentation engineering, with a keen focus on plasma chemistry and surface reaction kinetics. He earned his doctoral degree from Korea University, Seoul, and has contributed significantly to semiconductor materials and dry etching technologies. His publications in high-impact journals such as Materials reflect his dedication to advancing plasma-based microfabrication techniques. Prof. Kwon is recognized for his rigorous approach to experimental research and his contributions to the understanding of gas-phase interactions in etching environments.
Publication Profile
🎓 Education and Qualifications
Prof. Kwang-Ho Kwon completed his Ph.D. in Control and Instrumentation Engineering from Korea University, Seoul, South Korea, between March 1987 and February 1993. His doctoral education equipped him with deep knowledge in control systems, instrumentation, and analytical modeling. This academic foundation laid the groundwork for his later specialization in plasma processing and materials engineering. Korea University, being one of the top-tier institutions in Asia, provided a dynamic research environment for Prof. Kwon to develop his expertise. His qualifications underscore his capability to tackle complex engineering challenges in both theoretical and applied contexts. 🎓📘🛠️
🔍 Research Focus
Prof. Kwon’s research primarily focuses on plasma chemistry, surface reaction kinetics, and dry etching processes in semiconductor fabrication. He investigates the interactions between fluorocarbon-based gases and silicon substrates to optimize etching profiles and improve precision in microfabrication. His work with gas mixtures such as CF₄, CHF₃, C₄F₈, and C₆F₁₂O explores their chemical behavior and performance in plasma environments. By understanding gas-phase parameters and their correlation with etching outcomes, his studies contribute to the development of cleaner, more efficient, and environmentally sustainable technologies for the electronics industry. 🧪⚛️💻
Publication Top Notes
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“On Relationships between Plasma Chemistry and Surface Reaction Kinetics Providing the Etching of Silicon in CF₄, CHF₃, and C₄F₈ Gases Mixed with Oxygen” | Materials, 2023 | DOI: 10.3390/ma16145043 | Cited by: 5 📚
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“Dry Etching Performance and Gas-Phase Parameters of C₆F₁₂O + Ar Plasma in Comparison with CF₄ + Ar” | Materials, 2021 | DOI: 10.3390/ma14071595 | Cited by: 8 📚
