Dr. Feng Qin, Nanjing University, China
Dr. Feng Qin (秦峰), born on September 13, 1991, is a Research Associate at the College of Engineering and Applied Sciences, Nanjing University. Specializing in 2D materials and heterostructures, he focuses on nonlinear and nonreciprocal transport and the photovoltaic effect. His research highlights include work on interfacial lattice symmetry engineering for nonlinear optoelectronics and contributions to high-impact journals like Nature Nanotechnology and Science Advances. Dr. Qin has secured multiple prestigious research grants and has a rich academic background from the University of Tokyo and Tsinghua University. ππ¬β¨
Publication profile
Educational Background π
Feng Qin’s academic journey began with a Bachelor of Science in Physics from Tsinghua University in 2014, where he was mentored by Professor Zhengyu Weng. He pursued his Ph.D. in Engineering at the University of Tokyo, under the guidance of Professor Yoshihiro Iwasa, completing his degree in 2020. π§βπβ¨
Professional Experience π§βπ¬
Feng Qin joined the College of Engineering and Applied Sciences at Nanjing University as a Postdoctoral Researcher in July 2020, working with Professor Hongtao Yuan. His research contributions and achievements earned him a promotion to Research Associate in June 2024. π¨βπ¬π«
Research Focus
Feng Qin is a distinguished researcher with a focus on advanced materials and electronic devices. His work prominently features 2D materials and heterostructures, exploring their applications in nonlinear optoelectronics, superconductivity, and magnetic phenomena. His notable research includes the study of superionic fluoride gate dielectrics, high thermal conductivity in anisotropic materials, and valley-dimensionality locking in cubic phosphides. He has contributed significantly to the understanding of Berry curvature effects and the engineering of van der Waals heterointerfaces. His interdisciplinary approach combines materials science, physics, and engineering to innovate in nanoelectronics and optoelectronics. ππ‘π¬
Publication Top Notes