PARTHASARADHI REDDY | Astronomy | Best Researcher Award

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Dr. C. PARTHASARADHI REDDY | Astronomy | Best Researcher Award

Dr. C. PARTHASARADHI REDDY, VEL TECH RANGARAJAN DR. SAGUNTHALA R&D INSTITUTE OF SCIENCE AND TECHNOLOGY, India

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Dr. C. Parthasaradhi Reddy is a highly suitable candidate for the Best Researcher Award. His extensive background in physics, coupled with his significant teaching and administrative experience, exemplifies his dedication to the field. As an Associate Professor at Vel Tech Deemed to be University, Dr. Reddy has demonstrated exceptional competency in nurturing students’ potential, providing advisory support, and fostering a productive learning environment.

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Research Contributions:

Dr. Reddy’s research spans various advanced topics in materials science, such as the synthesis of nanostructures for environmental applications, development of thin-film photovoltaics, and investigation of novel materials for energy storage. His prolific publication record includes numerous articles in high-impact journals, reflecting his ability to contribute valuable insights and advancements to the scientific community.

Key Achievements:

  • Developed synergistic ZnO/SnO2 composite nanostructures for enhanced catalytic degradation of pollutants.
  • Explored innovative materials like pyrargyrite Ag3SbS3 and coral reef-like zinc cobalt oxide composites for energy applications.
  • Contributed to the understanding of optical and dielectric properties of doped P2O5-ZnO-LiF glasses, with implications for luminescence and energy transfer.

Publication Highlights:

  1. “One-step formation of synergistic ZnO/SnO2 composite nanostructures” – Materials Chemistry and Physics (2024).
  2. “Development of pyrargyrite Ag3SbS3 absorber films” – Solid State Sciences (2024).
  3. “In-situ synthesis of coral reef-like synergistic zinc cobalt oxide and zinc manganese oxide composite” – Colloids Surf. A: Physicochem. Eng. Asp (2024).

Dr. Reddy’s ability to produce high-quality research while maintaining a strong educational presence makes him an ideal candidate for recognition as the Best Researcher. His commitment to advancing the field of physics and his impactful research contributions underscore his suitability for this prestigious award.

Feng Qin | Astronomy Award | Best Researcher Award

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Dr. Feng Qin | Astronomy Award | Best Researcher Award

Dr. Feng Qin, Nanjing University, China

Dr. Feng Qin (็งฆๅณฐ), born on September 13, 1991, is a Research Associate at the College of Engineering and Applied Sciences, Nanjing University. Specializing in 2D materials and heterostructures, he focuses on nonlinear and nonreciprocal transport and the photovoltaic effect. His research highlights include work on interfacial lattice symmetry engineering for nonlinear optoelectronics and contributions to high-impact journals like Nature Nanotechnology and Science Advances. Dr. Qin has secured multiple prestigious research grants and has a rich academic background from the University of Tokyo and Tsinghua University. ๐Ÿ“š๐Ÿ”ฌโœจ

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Educational Background ๐ŸŽ“

Feng Qin’s academic journey began with a Bachelor of Science in Physics from Tsinghua University in 2014, where he was mentored by Professor Zhengyu Weng. He pursued his Ph.D. in Engineering at the University of Tokyo, under the guidance of Professor Yoshihiro Iwasa, completing his degree in 2020. ๐Ÿง‘โ€๐ŸŽ“โœจ

Professional Experience ๐Ÿง‘โ€๐Ÿ”ฌ

Feng Qin joined the College of Engineering and Applied Sciences at Nanjing University as a Postdoctoral Researcher in July 2020, working with Professor Hongtao Yuan. His research contributions and achievements earned him a promotion to Research Associate in June 2024. ๐Ÿ‘จโ€๐Ÿ”ฌ๐Ÿซ

Research Focus

Feng Qin is a distinguished researcher with a focus on advanced materials and electronic devices. His work prominently features 2D materials and heterostructures, exploring their applications in nonlinear optoelectronics, superconductivity, and magnetic phenomena. His notable research includes the study of superionic fluoride gate dielectrics, high thermal conductivity in anisotropic materials, and valley-dimensionality locking in cubic phosphides. He has contributed significantly to the understanding of Berry curvature effects and the engineering of van der Waals heterointerfaces. His interdisciplinary approach combines materials science, physics, and engineering to innovate in nanoelectronics and optoelectronics. ๐ŸŒŸ๐Ÿ“ก๐Ÿ”ฌ

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