postdoc at Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, China
Dr. Hongwei Xu is a Postdoctoral Fellow at the Shenzhen Institute of Advanced Technology (SIAT), CAS, specializing in low-dimensional optoelectronic materials ⚡. He earned his PhD in Fusion Electronics from Hanyang University, Korea 🇰🇷 and holds a Master’s in Applied Chemistry from Qingdao Agricultural University. His research spans semiconductor thin films, heterojunction photodetectors, and photoelectric devices. With 11 SCI publications (H-index: 11) 📚, 3 patents 🏅, and expertise in TEM, SEM, XRD, and Raman spectroscopy, he actively contributes as a guest editor for Frontiers in Photonics. 🌍💡
Publication Profile
Google Scholar
🎓 Academic Journey
Dr. Hongwei Xu is a dedicated researcher specializing in low-dimensional energy materials. Currently, he is a Postdoctoral Fellow at the Institute of Carbon Neutrality, Shenzhen Institute of Advanced Technology (SIAT), Chinese Academy of Sciences (2023–2025), under the guidance of Prof. Ding Baofu and Academician Cheng Huiming. He earned his PhD in Fusion Electronics from Hanyang University, Korea (2018–2022), mentored by Prof. Jae Kyeong Jeong. His academic path includes a Master’s in Applied Chemistry (2015–2018) and a Bachelor’s in Pharmaceutical Engineering (2011–2015) from Qingdao Agricultural University, supervised by Prof. Shi Jinsheng. His expertise spans energy materials and applied chemistry. ⚡🔬
🏆 Skills & Achievements
Dr. Hongwei Xu is highly skilled in advanced material characterization techniques, including TEM, SEM, AFM, XRD, XPS, PL, Raman, and UV-vis spectroscopy. He is proficient in semiconductor thin-film preparation and data/image processing software. As a guest editor for Frontiers in Photonics, he has published 11 SCI papers and holds 3 patents as an independent first author. His linguistic proficiency includes English (Level 6) and Korean (Level 5). Recognized for academic excellence, he received the Excellent Master’s Thesis Award (2019), Excellent Self-Funded International Student Award (2022), and led the 75th Postdoctoral Face Fund. 🎖️🔬📊
🔬 Research Focus
Dr. Hongwei Xu specializes in low-dimensional optics and materials science, with extensive experience in polarization optics and photoelectric device fabrication. His research explores the preparation and optical/photoelectric properties of advanced materials. He is proficient in N/P-type semiconductor thin-film technology, focusing on its fabrication and performance analysis. Additionally, he conducts in-depth studies on heterojunction photodetectors based on thin-film transistors, aiming to enhance their efficiency and applications. His expertise bridges the gap between materials science and photoelectronics, contributing to advancements in optoelectronic devices and semiconductor technologies. ⚡🔬💡
Publication Top Notes
1️⃣ Convenient and large-scale synthesis of high-quality, all-inorganic lead halide perovskite nanocrystals for white light-emitting diodes | Cited by: 39 | Year: 2019 📡💡
2️⃣ Lanthanum doping enabling high drain current modulation in a p-type tin monoxide thin-film transistor | Cited by: 34 | Year: 2019 ⚡🔬
3️⃣ Improved switching characteristics of p-type tin monoxide field-effect transistors through Schottky energy barrier engineering | Cited by: 25 | Year: 2020 🔋🔍
4️⃣ A novel Mn (II)-based green phosphor and its self-reduction mechanism | Cited by: 20 | Year: 2018 💚🔬
5️⃣ Structure and photoluminescence properties of novel Sr₆Ca₄(PO₄)₆F₂:Re (Re=Eu²⁺,Mn²⁺) phosphors with energy transfer for white-emitting LEDs | Cited by: 19 | Year: 2017 ✨📡
6️⃣ Origin of ambipolar behavior in p-type tin monoxide semiconductors: Impact of oxygen vacancy defects | Cited by: 16 | Year: 2021 🌬️🔍
7️⃣ Sites occupancy preference of Bi³⁺ and white light emission through co-doped Sm³⁺ in LiGd₅P₂O₈ | Cited by: 16 | Year: 2018 💡⚗️
8️⃣ A multifunctional optoelectronic device based on 2D material with wide bandgap | Cited by: 15 | Year: 2023 📲🛠️
9️⃣ Self-reduction process and enhanced blue emission in SrAl₂Si₂O₈: Eu, Tb via electron transfer from Tb³⁺ to Eu³⁺ | Cited by: 15 | Year: 2017 🔵⚡
🔟 High-Performance Broadband Phototransistor Based on TeOx/IGTO Heterojunctions | Cited by: 14 | Year: 2022 📡📶